Description

Fifth Generation HEXFETs utilize advanced

processing techniques to achieve extremely low onresistance

per silicon area. This benefit, combined

with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety

of applications.

The TO-220 package is universally preferred for all

commercial industrial applications at power

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-

220 contribute to its wide acceptance throughout the

industry.

 Logic - Level Gate Drive

 Advanced Process Technology

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fast Switching

 Fully Avalanche Rated

 Lead-Free