Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

文件：97.71 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ●Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Supply ( SMPS )

文件：189 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

文件：111.63 Kbytes 页数：9 Pages

IRF

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：387.52 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

文件：342.98 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：387.52 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

文件：342.98 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

文件：342.98 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

文件：342.98 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive    requirement • Improved gate, avalanche and dynamic dV/dt    ruggedness • Fully characterized capacitance and avalanche    voltage and current • Effective Coss specified • Material categorization: for definitions of compliance    ple

文件：342.98 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世