6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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Intersil

6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. Features • 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines f

文件：66.91 Kbytes 页数：7 Pages

HARRIS

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

文件：97.71 Kbytes 页数：8 Pages

IRF

N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 1.0 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 A

文件：92.75 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：2.98806 Mbytes 页数：7 Pages

KERSEMI

SEMICONDUCTORS

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iscN-Channel MOSFET Transistor

文件：328.21 Kbytes 页数：2 Pages

ISC

无锡固电

CURRENT-MODE-PWM CONTROLLER

文件：301.07 Kbytes 页数：20 Pages

TI

德州仪器

Power MOSFET

文件：590.8 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

文件：641.86 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世