6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：55.08 Kbytes 页数：7 Pages

INTERSIL

6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. Features • 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines f

文件：66.91 Kbytes 页数：7 Pages

HARRIS

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified ( See AN 1001) Applications ● Switch Mode Power Su

文件：97.71 Kbytes 页数：8 Pages

IRF

N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 1.0 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 A

文件：92.75 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：2.98806 Mbytes 页数：7 Pages

KERSEMI

SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

未分类制造商

iscN-Channel MOSFET Transistor

文件：328.21 Kbytes 页数：2 Pages

ISC

无锡固电

CURRENT-MODE-PWM CONTROLLER

文件：301.07 Kbytes 页数：20 Pages

TI

德州仪器

Power MOSFET

文件：590.8 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：641.86 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司