Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：171.24 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：697.05 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：4.33232 Mbytes 页数：10 Pages

KERSEMI

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

文件：1.09618 Mbytes 页数：10 Pages

KERSEMI

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：171.24 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：697.05 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：4.33232 Mbytes 页数：10 Pages

KERSEMI

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.092 Ω (Typ.)

文件：254.86 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

文件：47.74 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.12 Ω ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ AVALANCHE RUGGED TECHNOLOGY ■ APPLICATION ORIENTED CHARACTERIZATION ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE APPLICAT

文件：77.58 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体