首页 >IRF530>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRF530NPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件:188.59 Kbytes 页数:9 Pages

IRF

IRF530NPBF

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

文件:972.88 Kbytes 页数:7 Pages

VBSEMI

微碧半导体

IRF530NS

丝印:D2PAK;Package:TO-263;N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

文件:1.01006 Mbytes 页数:8 Pages

VBSEMI

微碧半导体

IRF530NS

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件:1.5565 Mbytes 页数:10 Pages

KERSEMI

IRF530NS

丝印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件:189.19 Kbytes 页数:2 Pages

ISC

无锡固电

IRF530NS

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件:618.07 Kbytes 页数:10 Pages

IRF

IRF530NS

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:284.9 Kbytes 页数:11 Pages

IRF

IRF530NSPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:275.75 Kbytes 页数:10 Pages

IRF

IRF530NSTRLPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:876.19 Kbytes 页数:4 Pages

IRF

IRF530NSTRRPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:284.9 Kbytes 页数:11 Pages

IRF

技术参数

  • Peak Inverse Voltage PIV (V):

    100

  • Peak Fwd. Surge Current @ 8.3ms Superimposed Ifsm (A):

     

  • Package:

     

供应商型号品牌批号封装库存备注价格
XY/星宇佳
21+
TO-220
20000
自主品牌 量大可定
询价
ON/安森美
0042+
TO-220
300
原装正品 可含税交易
询价
IR
24+
TO-220
15800
绝对原装现货,价格低,欢迎询购!
询价
IR
23+
1688
房间现货库存:QQ:373621633
询价
ON/安森美
23+
TO-220
12500
全新原装现货,假一赔十
询价
IR
24+
TO 220
161466
明嘉莱只做原装正品现货
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR(国际整流器)
24+
N/A
52048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
IR
05+
TO-220
8000
自己公司全新库存绝对有货
询价
IOR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
更多IRF530供应商 更新时间2025-10-11 17:30:00