型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRF530 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS(on) = 0.140 Ω 文件:481.96 Kbytes 页数:5 Pages | TRSYS Transys Electronics | TRSYS | |
IRF530 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s 文件:47.74 Kbytes 页数:3 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
IRF530 | TO-220-3L Plastic-Encapsulate MOSFETS FEATURES Low RDS(on) VGS Rated at ± 20V Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. 文件:579.14 Kbytes 页数:2 Pages | DGNJDZ 南晶电子 | DGNJDZ | |
IRF530 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n DC-DC & DC-AC CONVERTER n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) 文件:83.35 Kbytes 页数:5 Pages | SYC | SYC | |
IRF530 | N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 文件:187.75 Kbytes 页数:3 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
IRF530 | N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET 文件:281.94 Kbytes 页数:3 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
IRF530 | SEMICONDUCTORS 文件:2.43533 Mbytes 页数:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | |
IRF530 | 14.0A 100V N CHANNEL POWER MOSFET 文件:356.3 Kbytes 页数:6 Pages | FCI 富加宜 | FCI | |
IRF530 | Power MOSFET 文件:282.16 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
丝印:IRF5305;Package:TO-220;-60V P-Channel MOSFET Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON) 文件:723.45 Kbytes 页数:8 Pages | UMW 友台半导体 | UMW |
技术参数
- Peak Inverse Voltage PIV (V):
100
- Peak Fwd. Surge Current @ 8.3ms Superimposed Ifsm (A):
- Package:
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
XY/星宇佳 |
21+ |
TO-220 |
20000 |
自主品牌 量大可定 |
询价 | ||
ON/安森美 |
0042+ |
TO-220 |
300 |
原装正品 可含税交易 |
询价 | ||
IR |
24+ |
TO-220 |
15800 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IR |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
ON/安森美 |
23+ |
TO-220 |
12500 |
全新原装现货,假一赔十 |
询价 | ||
IR |
24+ |
TO 220 |
161466 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR(国际整流器) |
24+ |
N/A |
52048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
IR |
05+ |
TO-220 |
8000 |
自己公司全新库存绝对有货 |
询价 | ||
IOR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 |
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