型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:IRF5305S;Package:TO-263;-55V P-Channel MOSFET Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON) 文件:3.58041 Mbytes 页数:8 Pages | EVVOSEMI 翊欧 | EVVOSEMI | ||
丝印:IRF5305S;Package:TO-263;-55V P-Channel MOSFET Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON) 文件:1.48095 Mbytes 页数:8 Pages | UMW 友台半导体 | UMW | ||
IRF530 | Power MOSFET • Dynamic dV/dt rating\n• Repetitive avalanche rated\n• 175 °C operating temperature; | Vishay 威世 | Vishay | |
IRF530 | N−Channel Enhancement−Mode Silicon Gate | ONSEMI 安森美半导体 | ONSEMI | |
IRF530 | Mosfet | FCI 富加宜 | FCI | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor 文件:158.98 Kbytes 页数:8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr 文件:124.32 Kbytes 页数:8 Pages | IRF | IRF | ||
-55V P-Channel MOSFET Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON) 文件:3.58041 Mbytes 页数:8 Pages | EVVOSEMI 翊欧 | EVVOSEMI | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件:3.15583 Mbytes 页数:8 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte 文件:1.22797 Mbytes 页数:10 Pages | KERSEMI | KERSEMI |
技术参数
- Peak Inverse Voltage PIV (V):
100
- Peak Fwd. Surge Current @ 8.3ms Superimposed Ifsm (A):
- Package:
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
XY/星宇佳 |
21+ |
TO-220 |
20000 |
自主品牌 量大可定 |
询价 | ||
ON/安森美 |
0042+ |
TO-220 |
300 |
原装正品 可含税交易 |
询价 | ||
IR |
24+ |
TO-220 |
15800 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IR |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
ON/安森美 |
23+ |
TO-220 |
12500 |
全新原装现货,假一赔十 |
询价 | ||
IR |
24+ |
TO 220 |
161466 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR(国际整流器) |
24+ |
N/A |
52048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
IR |
05+ |
TO-220 |
8000 |
自己公司全新库存绝对有货 |
询价 | ||
IOR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 |
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