型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation 文件:608.52 Kbytes 页数:8 Pages | VishayVishay Siliconix 威世 | Vishay | ||
N-Channel Power MOSFETs Avalanche Energy Rated
文件:390.01 Kbytes 页数:5 Pages | HARRIS | HARRIS | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in 文件:177.08 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas 文件:218.01 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件:180.1 Kbytes 页数:6 Pages | IRF | IRF | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas 文件:218.01 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in 文件:177.08 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in 文件:177.08 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in 文件:177.08 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Power MOSFET 文件:282.16 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世 | Vishay |
技术参数
- Peak Inverse Voltage PIV (V):
100
- Peak Fwd. Surge Current @ 8.3ms Superimposed Ifsm (A):
- Package:
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
XY/星宇佳 |
21+ |
TO-220 |
20000 |
自主品牌 量大可定 |
询价 | ||
ON/安森美 |
0042+ |
TO-220 |
300 |
原装正品 可含税交易 |
询价 | ||
IR |
24+ |
TO-220 |
15800 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IR |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
ON/安森美 |
23+ |
TO-220 |
12500 |
全新原装现货,假一赔十 |
询价 | ||
IR |
24+ |
TO 220 |
161466 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR(国际整流器) |
24+ |
N/A |
52048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
IR |
05+ |
TO-220 |
8000 |
自己公司全新库存绝对有货 |
询价 | ||
IOR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 |
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