isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：329.31 Kbytes 页数：2 Pages

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无锡固电

N-Channel PowerTrench짰 MOSFET 100 V, 30 A, 37 m廓

文件：303.25 Kbytes 页数：6 Pages

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仙童半导体

N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET

文件：335.87 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low

文件：335.87 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=29A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =36mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.94 Kbytes 页数：2 Pages

ISC

无锡固电