N 沟道，Power Trench® MOSFET，40V，110A，1.2mΩ

N-Channel Power Trench® MOSFET, 40V, 110A, 1.2mΩ •典型 rDS(on) = 1 mΩ（VGS = 10 V、ID = 80 A）\n•典型 Qg(tot) = 164 nC（VGS = 10 V、ID = 80 A）\n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101;

ONSEMI

安森美半导体

MOSFET N-CH 40V 110A TO263AB

ONSEMI

安森美半导体

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓

文件：484.65 Kbytes 页数：6 Pages

Fairchild

仙童半导体

N-Channel PowerTrench MOSFET

Features ■ Typical RDS(on) = 0.65 mΩ at VGS = 10V, ID = 80 A ■ Typical Qg(tot) = 144 nC at VGS = 10V, ID = 80 A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ PowerTrain Management ■ Solenoid and Motor Drivers ■ Integrated Starter/Alt

文件：482.01 Kbytes 页数：6 Pages

Fairchild

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