N-Channel PowerTrench MOSFET

Features ■ Typical RDS(on) = 0.65 mΩ at VGS = 10V, ID = 80 A ■ Typical Qg(tot) = 144 nC at VGS = 10V, ID = 80 A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ PowerTrain Management ■ Solenoid and Motor Drivers ■ Integrated Starter/Alt

文件：482.01 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，PowerTrench® MOSFET，40V，240 A，0.9 mΩ

N-Channel PowerTrench® MOSFET, 40 V, 240 A, 0.9 mΩ • 典型 RDS(on) = .65 mΩ（需 VGS = 10 V, ID = 80 A）\n• 典型 Qg(tot) = 144°C（需 VGS = 10 V、ID = 80 A）\n• UIS 能力\n• 符合 RoHS 标准\n• 符合 AEC Q101 标准;

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL 40 V, 0.95 m, 300 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Small Footprint (TOLL) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：217.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET, Single N-Channel, TOLL, 40 V, 0.95 mΩ, 325 A

FDBL9403−F085T6/DFDBL9403-F085T6 Product Preview MOSFET - Power, Single N-Channel, TOLL40 V, 0.9 mΩ, 325 A • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant\n• Small Footprint (TOLL) for Compact Design;

ONSEMI

安森美半导体

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 40V 50A/300A 8HPSOF

ONSEMI

安森美半导体