N-Channel PowerTrench짰 MOSFET

Features ■ Typical RDS(on) = 0.9 mΩ at VGS = 10V, ID = 80 A ■ Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ PowerTrain Management ■ Solenoid and Motor Drivers ■ Integrated Starter/Alter

文件：385.77 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道 PowerTrench® MOSFET，40 V，240 A，1.2 mΩ

N-Channel PowerTrench® MOSFET, 40 V, 240 A, 1.2 mΩ • 典型 RDS(on) = 0.9 mΩ（需 VGS = 10 V、ID = 80 A）\n• 典型 Qg(tot) = 90 nC（需 VGS = 10 V、ID = 80 A）\n• UIS 能力\n• 符合RoHS标准\n• 符合 AEC Q101 标准;

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, TOLL

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Lowers Switching Noise/EMI • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：296.27 Kbytes 页数：1 Pages

ONSEMI

安森美半导体

Power MOSFET, Single N-Channel, TOLL, 40 V, 1.21 mΩ, 259 A

FDBL9406−F085T6 Product Preview MOSFET - Power, Single N-Channel, TOLL 40 V, 1.16 mΩ, 259 A\n\nLow QG and Capacitance • Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• These Devices are Pb−Free and are RoHS Compliant\n• AEC−Q101 Qualified and PPAP Capable\n• Lowers Switching Noise/EMI\n• Small Footprint (TOLL) for Compact Design;

ONSEMI

安森美半导体

MOSFET N-Channel Power Trench MOSFET

ONSEMI

安森美半导体

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 40V 45A/240A 8HPSOF

ONSEMI

安森美半导体