丝印：FDB8447L；Package：TO-263AB；40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ

Features Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimi

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ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

40V N-Channel PowerTrench MOSFET

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，PowerTrench® MOSFET，40V，50A，8.5mΩ

此单N沟道MOSFET采用飞兆半导体专有的PowerTrench技术生产，以提供低rDS(on)和优化的BVDSS能力，从而在应用中提供卓越的性能优势。 •最大rDS(on) = 8.5m（VGS = 10V, ID = 14A）\n•VGS = 4.5V，ID = 11A时，最大rDS(on) = 11mΩ\n•快速开关\n•符合 RoHS 标准;

ONSEMI

安森美半导体