80V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0

文件：133.26 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-Channel 100 V (D-S) MOSFET

文件：1.00842 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N 沟道，PowerTrench® MOSFET，80V，3.0A，77mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •3.0 A, 80 V\n•RDS(on) = 77 mΩ@ VGS = 10 V\n•RDS(on) = 88 mΩ @ VGS = 6 V\n•高性能沟道技术可实现极低的RDS(ON)\n•低栅极电荷（13nC，典型值）\n•高功率和高电流处理能力\n•快速开关速度;

ONSEMI

安森美半导体

80V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (

文件：86.25 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Glass Passivated Single-Phase Bridge Rectifier

文件：598.99 Kbytes 页数：3 Pages

NELLSEMI

尼尔半导体

Glass Passivated Single-Phase Bridge Rectifier

文件：595.57 Kbytes 页数：3 Pages

NELLSEMI

尼尔半导体