80V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (

文件：86.25 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

80V N沟道PowerTrench® MOSFET

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。 •4.0 A，80 V\n•RDS(ON) = 70 mΩ @ VGS = 10 V\n•RDS(ON) = 80 mΩ @ VGS = 6 V\n•低栅极电荷（13nC典型值）\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

Glass Passivated Single-Phase Bridge Rectifier

文件：598.99 Kbytes 页数：3 Pages

NELLSEMI

尼尔半导体

Glass Passivated Single-Phase Bridge Rectifier

文件：595.57 Kbytes 页数：3 Pages

NELLSEMI

尼尔半导体

SINGLE PHASE BRIDGE

Description A range of extremely compact, encapsulated single phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation applications. Features ■ Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal c

文件：270.15 Kbytes 页数：6 Pages

IRF