N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V

文件：358.16 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=80A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：328.84 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，PowerTrench® MOSFET，逻辑电平，30V，80A，4.5mΩ

此N沟道逻辑电平MOSFET已经过专门设计，采用同步或常规的开关PWM控制器提高DC/DC转换器的整体效率。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。结果是MOSFET易于驱动，并且驱动安全性更高（即使在非常高的频率），而且DC/DC电源设计具有更高的整体效率。 • 80A, 30 V\n• RDS(ON) = 0.0035 Ω@ VGS =10 V\n• RDS(ON) = 0.0045 Ω@ VGS =4.5 V• 在高温下指定的临界DC电气参数• 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。• 高性能沟道技术可实现极低的RDS(ON)• 175°C最大结温额定值\n• Critical DC electrical parameters specified atelevated temperature\n• Rugged internal source-drain diode can eliminate theneed for ;

ONSEMI

安森美半导体

Dual N-Channel Power Trench짰 MOSFET 40 V, 12 A, 10 m廓

文件：341.18 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V

文件：358.16 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.97 Kbytes 页数：2 Pages

ISC

无锡固电