N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V

文件：358.16 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.97 Kbytes 页数：2 Pages

ISC

无锡固电

30V N沟道逻辑电平PowerTrench® MOSFET

此N沟道逻辑电平MOSFET已经过专门设计，采用同步或常规的开关PWM控制器提高DC/DC转换器的整体效率。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。 • • 80A, 30V\n• RDS(ON) = 0.0035 Ω@ VGS =10 V\n• RDS(ON) = 0.0045 Ω @ VGS = 4.5 V• 在高温下指定的临界DC电气参数• 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。• 高性能沟道技术可实现极低的RDS(ON)• 175°C最大结温额定值。\n• High performance trench technology for extremelylow RDS(ON)\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of silicon rectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：87.28 Kbytes 页数：3 Pages

MCC

LED BARGRAPH DISPLAY

文件：318.77 Kbytes 页数：5 Pages

FORYARD

复洋

NPN 300, 350, 400V 8 AMP SWITCHING

文件：105.18 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司