双 N 沟道，Power Trench® MOSFET，40V，12A，10mΩ

该器件包括两个专用N沟道MOSFET，采用双Power33 (3mm x 3mm MLP)封装。 封装增强用于出色的热性能。 •VGS = 10 V，ID = 12 A时，最大rDS(on) = 10mΩ\n•VGS = 4.5 V，ID = 10 A时，最大rDS(on) = 14mΩ\n•VGS = 3.2 V，ID = 4 A时，最大rDS(on) = 28mΩ\n•终端无引线且符合RoHS标准;

ONSEMI

安森美半导体

Dual N-Channel Power Trench짰 MOSFET 40 V, 12 A, 10 m廓

文件：341.18 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V

文件：358.16 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.97 Kbytes 页数：2 Pages

ISC

无锡固电

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of silicon rectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：87.28 Kbytes 页数：3 Pages

MCC