FCD900N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCD900N60Z

FCD900N60ZN-ChannelSuperFETIIMOSFET600V,4.5A,900m廓

FCD900N60ZCT-ND

FCD900N60ZN-ChannelSuperFETIIMOSFET600V,4.5A,900m廓

FCU900N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCU900N60Z

600VN-ChannelMOSFET

Description SuperFET®IIis,Fairchild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •675V@TJ=150oC •Max.RDS(on)=900mΩ •Ultra

PJMD900N60EC

600VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:900mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-252AApackage Terminals:So

PJMF900N60EC

600VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:900mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:ITO-220AB-Fpackage Terminals:

PJMP900N60EC

600VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:900mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-220AB-Lpackage Terminals: