丝印：900N60EC；Package：TO-220AB-L；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 900mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-220AB-L package  Terminals:

文件：563.04 Kbytes 页数：7 Pages

PANJIT

強茂

超级结MOSFET (600 - 650V)

Panjit

強茂

FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m廓

文件：614.18 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：353.88 Kbytes 页数：2 Pages

ISC

无锡固电

FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m廓

文件：614.18 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体