FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m廓

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

600V N-Channel MOSFET

Description SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Features • 675V @TJ = 150oC • Max. RDS(on) = 900mΩ • Ultra

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FAIRCHILD

仙童半导体

600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 900mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-252AA package  Terminals: So

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PANJIT

強茂