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CED12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED12P15

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V,-12A,RDS(ON)=0.24W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED1310S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,74A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED1310SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,76A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED13N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED14G04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,125A,RDS(ON)=3.8mΩ@VGS=10V. RDS(ON)=6.8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED14N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,12A,RDS(ON)=100mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=140mW@VGS=6V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED1588S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 850V@TJmax,11A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED15N60LN

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED15N60SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

供应商型号品牌批号封装库存备注价格
CET
24+
TO-251
5000
全现原装公司现货
询价
CET
23+
SOT-223
8650
受权代理!全新原装现货特价热卖!
询价
TOSHIBA/东芝
23+
TO-252
69820
终端可以免费供样,支持BOM配单!
询价
CET
07+PBF
SOT-223
6560
优势
询价
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
CET
23+
SOT-223
50000
全新原装正品现货,支持订货
询价
C
TO-251
22+
6000
十年配单,只做原装
询价
CET/華瑞
21+
SOT-223
9852
只做原装正品现货!或订货假一赔十!
询价
C
23+
TO-251
6000
原装正品,支持实单
询价
CET
07+
SOT-223
6560
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多CED1供应商 更新时间2025-5-24 10:20:00