CED14G04规格书供应代理华瑞CET-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CED14G04	文件：421.37 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 40V, 125A, RDS(ON) = 3.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：421.37 Kbytes 页数：4 Pages	CET 华瑞	CET
CED14G04	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEP14G04	文件：425.09 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：425.09 Kbytes 页数：4 Pages	CET 华瑞	CET
CEU14G04	文件：421.37 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 40V, 125A, RDS(ON) = 3.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：421.37 Kbytes 页数：4 Pages	CET 华瑞	CET

更多CED14G04供应商更新时间2025-10-9 11:10:00