N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 36A, RDS(ON) = 16.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 24 mW @VGS = 4.5V.

文件：937.78 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 13.3A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：353.55 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：628.86 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：690 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 13.3A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. RDS(ON) = 125mW @VGS = 5V.

文件：491.95 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 12A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 165mW @VGS = 3V. RDS(ON) = 130mW @VGS = 5V.

文件：518.02 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 17A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：140.97 Kbytes 页数：4 Pages

CET

华瑞

8-Channel DAS with 14-Bit, Bipolar Input, Simultaneous Sampling ADC

GENERAL DESCRIPTION The AD76071 is a 14-bit, simultaneous sampling, analog-to-digital data acquisition system (DAS). The part contains analog input clamp protection; a second-order antialiasing filter; a track and-hold amplifier; a 14-bit charge redistribution, successive approximation analog-to-

文件：681.09 Kbytes 页数：32 Pages

AD

亚德诺

8-/6-/4-Channel DAS with 16-Bit,Bipolar Input,Simultaneous Sampling ADC

GENERAL DESCRIPTION The AD76061/AD7606-6/AD7606-4 are 16-bit, simultaneous sampling, analog-to-digital data acquisition systems (DAS) with eight, six, and four channels, respectively. Each part contains analog input clamp protection, a second-order antialiasing filter, a track-and-hold amplifier,

文件：799.56 Kbytes 页数：36 Pages

AD

亚德诺

N-Channel Enhancement Mode Field Effect Transistor

文件：651.5 Kbytes 页数：4 Pages

CET

华瑞