SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A) • Low Ciss: Ciss =

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES · Super low on-state resistance RDS(on)1 = 100 mW (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mW (MAX.) (VGS

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RENESAS

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -16A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

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