Silicon P-Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A

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HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

文件：87.36 Kbytes 页数：8 Pages

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

文件：87.36 Kbytes 页数：8 Pages

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文件：114.03 Kbytes 页数：8 Pages

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Silicon P Channel MOS FET

文件：114.03 Kbytes 页数：8 Pages

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Silicon P Channel MOS FET

文件：114.03 Kbytes 页数：8 Pages

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