Hight Speed Power Switching

Features Low on-resistance RDS(on)= 0.065 typ. (at VGS= -10V, ID=-5A) Low drive current High speed switching 4V gate drive devices.

文件：52.09 Kbytes 页数：2 Pages

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Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices.

文件：50.81 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

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Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

文件：89.21 Kbytes 页数：8 Pages

RENESAS

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P-Channel MOSFET

文件：1.27354 Mbytes 页数：4 Pages

KEXIN

科信电子

Silicon P Channel MOS FET

* Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices.

文件：89.21 Kbytes 页数：8 Pages

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