2SJ505L规格书库存现货日立Hitachi-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ505L	文件：54.54 Kbytes Page：10 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：54.54 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ505L	文件：97.93 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：97.93 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ505L	文件：288.49 Kbytes Page：2 Pages	isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -50A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：288.49 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SJ505L-E	文件：97.93 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：97.93 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ505L	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas

更多2SJ505L供应商更新时间2025-10-4 11:01:00