SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 30 mΩMAX. (VGS= –10 V, ID= –15 A) RDS(on)2= 56 mΩMAX. (VGS= –4 V, ID= –15 A) • Low CissCiss= 4120 pF TYP. • Built-in

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NEC

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MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 30 mW MAX. (VGS = –10 V, ID = –15 A) RDS(on)2 = 56 mW MAX. (VGS = –4 V

文件：298.49 Kbytes 页数：10 Pages

RENESAS

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Power MOSFETs-Power MOSFETs for Automotive

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TO263

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上传：深圳市正纳电子有限公司

ON
TO-220-3

ON

上传：深圳市芯峰微电子科技有限公司