Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices.

文件：79.18 Kbytes 页数：7 Pages

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices.

文件：79.18 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A) • Low drive current • High speed switching • 2.5 V gate drive devices.

文件：79.18 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS =–4V, ID =–1A) • Low drive current • High speed switching • 2.5V gate drive devices.

文件：43.88 Kbytes 页数：8 Pages

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