2SJ506L-E规格书应用电路供应代理瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ506L-E	文件：89.21 Kbytes Page：8 Pages	Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. 文件：89.21 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ506S	文件：89.21 Kbytes Page：8 Pages	Silicon P Channel MOS FET * Low on-resistance RDS(on)= 0.065 Ωtyp. (at V GS = –10V, ID= –5A) * Low drive current * High speed switching * 4V gate drive devices. 文件：89.21 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ506S	文件：50.81 Kbytes Page：10 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.065 Ωtyp. (at VGS = –10V, ID= –5A) • Low drive current • High speed switching • 4V gate drive devices. 文件：50.81 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ506S	文件：52.09 Kbytes Page：2 Pages	Hight Speed Power Switching Features Low on-resistance RDS(on)= 0.065 typ. (at VGS= -10V, ID=-5A) Low drive current High speed switching 4V gate drive devices. 文件：52.09 Kbytes 页数：2 Pages	KEXIN 科信电子	KEXIN

更多2SJ506L-E供应商更新时间2025-10-16 9:43:00