Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching

文件：83.09 Kbytes 页数：7 Pages

RENESAS

瑞萨

P-Channel Enhancement MOSFET

Application PWM applications Load switch | « Power management

文件：3.08949 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.35 Ω typ. at (VGS = –10V, ID = –1A) • Low drive current • 4 V gate drive devices • High speed switching

文件：47.87 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching

文件：83.09 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.35 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • 4 V gate drive devices • High speed switching

文件：83.09 Kbytes 页数：7 Pages

RENESAS

瑞萨