2SJ518AZTR-E数据表ic资料库存现货瑞萨-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
2SJ518AZTR-E	文件：83.09 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.35Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SJ518	文件：47.87 Kbytes Page：9 Pages	SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.35Ωtyp.at(VGS=–10V,ID=–1A) •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching	HitachiHitachi, Ltd. 日立公司	Hitachi
2SJ518	文件：83.09 Kbytes Page：7 Pages	SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.35Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SJ518	文件：959.08 Kbytes Page：7 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
2SJ518AZTL-E	文件：83.09 Kbytes Page：7 Pages	SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.35Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS

更多2SJ518AZTR-E供应商更新时间2024-5-24 17:52:00