2SJ505L-E资料使用说明书库存现货瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ505L-E	文件：97.93 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：97.93 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ505S	文件：54.54 Kbytes Page：10 Pages	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. 文件：54.54 Kbytes 页数：10 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ505S	文件：97.93 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：97.93 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SJ505STL-E	文件：97.93 Kbytes Page：9 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. 文件：97.93 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SJ505L-E供应商更新时间2026-1-27 10:20:00