Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

文件：53.04 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

文件：94.51 Kbytes 页数：9 Pages

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P-Channel 4 0 V (D-S) MOSFET

文件：976.27 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

文件：94.51 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET High Speed Power Switching

• Low on-resistance\nRDS(on) = 0.12 Ω typ.\n• 4 V gete drive devices\n• High speed switching;

HITACHI

日立

Power MOSFETs

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