Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

文件：1.29646 Mbytes 页数：7 Pages

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Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A

文件：43.78 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

文件：1.29646 Mbytes 页数：7 Pages

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TO263

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上传：深圳市正纳电子有限公司

TO-22F

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上传：深圳市华康联电子科技有限公司