2SJ484规格书应用电路行情报价瑞萨RENESAS-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
2SJ484	文件：43.6 Kbytes Page：9 Pages	Silicon P-Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS(on)=0.18Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ484	文件：79.21 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.18Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ484WYTL-E	文件：79.21 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.18Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ484WYTR-E	文件：79.21 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.18Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ484_15	文件：98.41 Kbytes Page：9 Pages	Silicon P Channel MOS FET	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多2SJ484供应商更新时间2025-7-13 10:20:00