Silicon P-Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices.

文件：43.6 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：79.21 Kbytes 页数：7 Pages

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The 2SJ484 is a Pch Single Power Mosfet -30V -2A 230Mohm Upak/Sc-62.

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：79.21 Kbytes 页数：7 Pages

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：79.21 Kbytes 页数：7 Pages

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文件：98.41 Kbytes 页数：9 Pages

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Techpublic

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