LOW FREQUENCY POWER AMPLIFIER

SILICON P-CHANNEL MOSFET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133, 2SK134, 2SK135

文件：192.12 Kbytes 页数：3 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P-channel MOSFET low frequency power amplifier

HITACHI

日立

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121

文件：72.05 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =

文件：302.59 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode

文件：50.84 Kbytes 页数：2 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =

文件：302.59 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121

文件：72.05 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121

文件：72.05 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =

文件：302.59 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES · Super low on-state resistance RDS(on)1 = 100 mW (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mW (MAX.) (VGS

文件：232.08 Kbytes 页数：10 Pages

RENESAS

瑞萨