2SJ494

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

ThisproductisP-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. •SuperLowOn-StateResistance RDS(on)1=50m:Max.(VGS=–10V,ID=–10A) RDS(on)2=88m:Max.(VGS=–4V,ID=–10A) •LowCissCiss=2360pFTyp. •Built-inGateProtectionDio

2SJ494

MOS FIELD EFFECT POWER TRANSISTORS

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=50m:Max.(VGS=–10V,ID=–10A) RDS(on)2=88m:Max.(VGS=–4V

2SJ495

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=30mΩMAX.(VGS=–10V,ID=–15A) RDS(on)2=56mΩMAX.(VGS=–4V,ID=–15A) •LowCissCiss=4120pFTYP. •Built-in

2SJ495

MOS FIELD EFFECT POWER TRANSISTORS

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=30mWMAX.(VGS=–10V,ID=–15A) RDS(on)2=56mWMAX.(VGS=–4V

2SJ496

Silicon P-Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=0.12Ωtyp.(atVGS=–10V,ID=–2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=–5A

2SJ496

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp.(atVGS=–10V,ID=–2.5A) •4Vgatedrivedevices. •LargecurrentcapacitanceID=–5A

2SJ496TZ-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp.(atVGS=–10V,ID=–2.5A) •4Vgatedrivedevices. •LargecurrentcapacitanceID=–5A

2SJ498

FIELD-EFFECT TRANSISTOR

DESCRIPTION 2SJ498isasmalltyperesinsealedPchanneljunctiontypeFET.Itisespeciallydesignedforlowfrequencyvoltageamplify,analogswitchapplication. FEATURES •Smalltypeformounting •High|yfs||yfs|=4mS(typ) •LowRDS(ON)RDS(ON)=220Ω(typ) APPLICATION Generalpurp

2SJ499

Load Switching Applications

LoadSwitchingApplications Features •LowON-stateresistance. •4Vdrive.

2SJ492-ZJ

P-Channel MOSFET