SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A) • Low Ciss: Ciss =

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NEC

瑞萨

MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max. (VGS = –4 V

文件：311.07 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. • Super Low On-State Resistance RDS(on)1= 50 m:Max. (VGS= –10 V, ID= –10 A) RDS(on)2= 88 m:Max. (VGS= –4 V, ID= –10 A) • Low Ciss Ciss= 2360 pF Typ. • Built-in Gate Protection Dio

文件：71.9 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 30 mW MAX. (VGS = –10 V, ID = –15 A) RDS(on)2 = 56 mW MAX. (VGS = –4 V

文件：298.49 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 30 mΩMAX. (VGS= –10 V, ID= –15 A) RDS(on)2= 56 mΩMAX. (VGS= –4 V, ID= –15 A) • Low CissCiss= 4120 pF TYP. • Built-in

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NEC

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Silicon P-Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A

文件：50.78 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

文件：87.36 Kbytes 页数：8 Pages

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瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

文件：87.36 Kbytes 页数：8 Pages

RENESAS

瑞萨

FIELD-EFFECT TRANSISTOR

DESCRIPTION 2SJ498 is a small type resin sealed P channel junction type FET. It is especially designed for low frequency voltage amplify, analog switch application. FEATURES • Small type for mounting • High |yfs| |yfs|=4mS(typ) • Low RDS(ON) RDS(ON)=220 Ω (typ) APPLICATION General purp

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ISAHAYA

谏早电子

Load Switching Applications

Load Switching Applications Features • Low ON-state resistance. • 4V drive.

文件：31.37 Kbytes 页数：4 Pages

SANYO

三洋