SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =

文件：302.59 Kbytes 页数：10 Pages

RENESAS

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P-Channel MOSFET

文件：1.65309 Mbytes 页数：5 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =

文件：302.59 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode

文件：50.84 Kbytes 页数：2 Pages

KEXIN

科信电子

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121

文件：72.05 Kbytes 页数：8 Pages

NEC

瑞萨