2SJ486ZU-TR-E资料使用说明书供应代理瑞萨-114ic电子网

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
2SJ486ZU-TR-E	文件：79.55 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Lowfrequencypowerswitching Features •Lowon-resistance RDS(on)=0.5Ωtyp.(atVGS=–4V,ID=–100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK).	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ486	文件：79.55 Kbytes Page：7 Pages	SiliconPChannelMOSFET Description Lowfrequencypowerswitching Features •Lowon-resistance RDS(on)=0.5Ωtyp.(atVGS=–4V,ID=–100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK).	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ486	文件：41.31 Kbytes Page：8 Pages	SiliconPChannelMOSFETLowFrequencyPowerSwitching Features •Lowon-resistance RDS(on)=0.5Ωtyp.(atVGS=–4V,ID=–100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK).	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ486ZU-TL-E	文件：79.55 Kbytes Page：7 Pages	SiliconPChannelMOSFET Description Lowfrequencypowerswitching Features •Lowon-resistance RDS(on)=0.5Ωtyp.(atVGS=–4V,ID=–100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK).	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多2SJ486ZU-TR-E供应商更新时间2025-5-22 10:19:00