2SJ486ZU-TL-E资料datasheet下载供应价格-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ486ZU-TL-E	文件：79.55 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK). 文件：79.55 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ486ZU-TR-E	文件：79.55 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK). 文件：79.55 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ486	文件：79.55 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK). 文件：79.55 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ486	文件：41.31 Kbytes Page：8 Pages	Silicon P Channel MOS FET Low FrequencyPower Switching Features • Low on-resistance RDS(on) = 0.5 Ω typ. (at VGS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). 文件：41.31 Kbytes 页数：8 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

更多2SJ486ZU-TL-E供应商更新时间2025-11-30 16:30:00