2SJ479L-E规格书应用电路供应商报价瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ479L-E	文件：91.77 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching 文件：91.77 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ479S	文件：38.52 Kbytes Page：7 Pages	Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching 文件：38.52 Kbytes 页数：7 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ479S	文件：91.77 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching 文件：91.77 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ479STL-E	文件：91.77 Kbytes Page：8 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching 文件：91.77 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS

更多2SJ479L-E供应商更新时间2025-12-18 13:47:00