2SJ48

LOW FREQUENCY POWER AMPLIFIER

SILICONP-CHANNELMOSFET LOWFREQUENCYPOWERAMPLIFIER ComplementaryPairwith2SK133,2SK134,2SK135

2SJ483

Silicon P Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=0.08Ωtyp(atVGS=–10V,ID=–2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=–5A

2SJ483

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.08Ωtyp(atVGS=–10V,ID=–2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=–5A

2SJ483TZ-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.08Ωtyp(atVGS=–10V,ID=–2.5A) •4Vgatedrivedevices. •Largecurrentcapacitance ID=–5A

2SJ484

Silicon P-Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=0.18Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.

2SJ484

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.18Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.

2SJ484WYTL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.18Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.

2SJ484WYTR-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.18Ωtyp.(atVGS=–10V,ID=–1A) •Lowdrivecurrent •Highspeedswitching •4Vgatedrivedevices.

2SJ485

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •4Vdrive.

2SJ486

Silicon P Channel MOS FET Low FrequencyPower Switching

Features •Lowon-resistance RDS(on)=0.5Ωtyp.(atVGS=–4V,ID=–100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK).