LOW FREQUENCY POWER AMPLIFIER

SILICON P-CHANNEL MOSFET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133, 2SK134, 2SK135

文件：192.12 Kbytes 页数：3 Pages

HITACHIHitachi Semiconductor

日立日立公司

LOW FREQUENCY POWER AMPLIFIER

HITACHI

日立

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

文件：1.29646 Mbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A

文件：43.78 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

文件：1.29646 Mbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices.

文件：43.6 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：79.21 Kbytes 页数：7 Pages

RENESAS

瑞萨

P-Channel Enhancement MOSFET

Application « PWM applications » Load switch « Power management

文件：2.18553 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：79.21 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

文件：79.21 Kbytes 页数：7 Pages

RENESAS

瑞萨