| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Silicon P Channel MOS FET Description Lowfrequencypowerswitching Features •Lowon-resistance RDS(on)=0.5Ωtyp.(atVGS=–4V,ID=–100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK). | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Description Lowfrequencypowerswitching Features •Lowon-resistance RDS(on)=0.5Ωtyp.(atVGS=–4V,ID=–100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK). | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Description Lowfrequencypowerswitching Features •Lowon-resistance RDS(on)=0.5Ωtyp.(atVGS=–4V,ID=–100mA) •2.5Vgatedrivedevices. •Smallpackage(MPAK). | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
P-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
详细参数
- 型号：
2SJ48
- 制造商：
HITACHI
- 制造商全称：
Hitachi Semiconductor
- 功能描述：
LOW FREQUENCY POWER AMPLIFIER
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
2000 |
询价 | |||||
HIT |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
HITACHI |
23+ |
TO-3 |
5000 |
专注配单,只做原装进口现货 |
询价 | ||
HITACHI |
2023+ |
TO-3 |
50000 |
原装现货 |
询价 | ||
HITACHI |
23+ |
TO-3 |
5000 |
专注配单,只做原装进口现货 |
询价 | ||
RENESAS |
05+ |
SOT223 |
1335 |
全新原装进口自己库存优势 |
询价 | ||
RENESAS |
23+ |
UPAK |
10000 |
原装正品,假一罚十 |
询价 | ||
RENESAS |
2016+ |
SOT89 |
4278 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
RENESAS |
24+ |
SOT23-3 |
5000 |
全现原装公司现货 |
询价 | ||
TOSHIBA |
1999 |
TO252 |
690 |
原装现货海量库存欢迎咨询 |
询价 |
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