Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive.

文件：43.51 Kbytes 页数：4 Pages

SANYO

三洋

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

文件：79.55 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET Low FrequencyPower Switching

Features • Low on-resistance RDS(on) = 0.5 Ω typ. (at VGS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK).

文件：41.31 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

文件：79.55 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

文件：79.55 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

文件：98.41 Kbytes 页数：9 Pages

RENESAS

瑞萨

P-Channel 60-V (D-S) MOSFET

文件：989.24 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

Description\nHigh speed power switching • Low on-resistance\n• 4 V gate drive devices.\n• Large current capacitance\n   ID = –5 A;

Renesas

瑞萨

Pch Single Power Mosfet -30V -2A 230Mohm Upak/Sc-62

The 2SJ484 is a Pch Single Power Mosfet -30V -2A 230Mohm Upak/Sc-62.

Renesas

瑞萨