Automotive-grade N-channel 60 V, 24 m typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that

文件：707.93 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

IRED in TO-Package

IRED in TO-Package • InGaAsP/InP - IRED • Designed for application in fiber-optic • Datacom systems • Transmitter for the 2nd optical window (1300 nm) • Suitable for bit rates up to 50 Mbit/s • 200 Mbit/s with appropriate pulse shaping of the modulation current • High output power with doub

文件：58.42 Kbytes 页数：3 Pages

SIEMENS

西门子

N-channel 650 V, 1.6 typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

文件：318.61 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：40C30H3L；Package：PowerFLAT；N-channel 30 V, 0.019 廓 typ., 10 A, P-channel 30 V, 0.024 廓 typ.,8 A STripFET??VI Power MOSFET in a PowerFLAT 5x6 d. i. package

Description This device is a complementary N-channel and Pchannel Power MOSFET developed using STripFET™ V (P-channel) and STripFET™ VI DeepGATE™ (N-channel) technologies. The resulting device exhibits low on-state resistance and an FOM among the lowest in its voltage class. Features • R

文件：1.4399 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：40DN3LLH5；Package：PowerFLAT5x6；Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET™ V Power MOSFET in a PowerFLAT™ 5x6 double island

Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Features ■ RDS(on) * Qg industry benchmark ■

文件：882.56 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.070 廓, 34 A MDmesh??V Power MOSFET in PowerFLAT??8x8 HV package

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatche

文件：686.55 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：42P4LLF6；Package：PowerFLAT；P-channel 40 V, 0.0155 廓 typ.,42 A, STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness

文件：451.44 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：42P6LLF6；Package：PowerFLAT；P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

文件：935.23 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc P-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=-42A@ TC=25℃ ·Drain Source Voltage- VDSS=- 60V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver·Power Tools ·UPS ·Motor Control

文件：376.42 Kbytes 页数：3 Pages

ISC

无锡固电

P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

文件：935.23 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体