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STL73D

High voltage fast-switching NPN power transistor

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is

文件:138.13 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

STL73D-AP

High voltage fast-switching NPN power transistor

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is

文件:138.13 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

STL7LN65K5AG

Automotive-grade N-channel 650 V, 0.95 Ω typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovati

文件:588.42 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STL7N80K5

Ultra low gate charge

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficie

文件:956.08 Kbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

STL80N3LLH6

丝印:80N3LLH6;Package:PowerFLAT5x6;N-channel 30 V, 0.0046, 21 A PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6t

文件:874.85 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

STL80N75F6

N-channel 75 V, 4.5 m typ., 18 A STripFET DeepGATE VI Power MOSFET in PowerFLAT 5x6 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Low gate charge • Very low on-resistance • High avalanche ru

文件:1.03776 Mbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

STL81004A

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件:129.41 Kbytes 页数:4 Pages

SIEMENS

西门子

STL81004H

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件:129.41 Kbytes 页数:4 Pages

SIEMENS

西门子

STL81004X

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件:129.41 Kbytes 页数:4 Pages

SIEMENS

西门子

STL81005A

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件:129.41 Kbytes 页数:4 Pages

SIEMENS

西门子

技术参数

  • 特性:

    高CV值,长寿命品,超小型.高度为5mm~9mm,105 ℃ 3000~5000小时

  • 使用温度范围:

    -40~+105℃

  • 稳定电压:

    6.3~50

  • 标准容量:

    1~1000

供应商型号品牌批号封装库存备注价格
ST
1650+
?
7500
只做原装进口,假一罚十
询价
ST/意法
20+
PowerFLAT-5x5-12
1000
进口原装现货假一赔万力挺实单
询价
ST
2022+
3440
全新原装 货期两周
询价
ST
22+
8PowerSMD Flat Leads
9000
原厂渠道,现货配单
询价
ON
2023+
XFLGA6
8800
正品渠道现货 终端可提供BOM表配单。
询价
ST
20+
44PLCC
11520
特价全新原装公司现货
询价
ST/意法
24+
QFN10
30000
房间原装现货特价热卖,有单详谈
询价
ST/意法
22+
SOT323-5L
18000
原装正品
询价
ST/意法
25+
SMDDIP
880000
明嘉莱只做原装正品现货
询价
ST(意法)
23+
NA
20094
原装正品 可支持验货,欢迎咨询
询价
更多STL供应商 更新时间2026-1-18 15:09:00