P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness

文件：935.23 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：APG40N10NF；Package：DFN5X6-8L；N-ChannelEnhancement Mode Field Effect Transistor

Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application

文件：1.90953 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

Automotive-grade N-channel 100 V, 20 mΩ typ., 18 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of m

文件：942.08 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：45N65M5；Package：PowerFLAT；N-channel 650 V, 0.075 廓 typ., 22.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??8x8 HV package

Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring hig

文件：878.47 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：45P3LLH6；Package：PowerFLAT；P-channel -30 V, 11 m廓 typ., -45 A STripFET??H6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness 

文件：841.85 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

200Ah Lithium UPS Systems

Features • Solar Ready™ • 48V MPPT Charge Controller with 7 Port GigE PoE Switch. Ports can be configured for 802.3at or 24V Passive PoE. Remote Monitoring and Control. • Weatherproof, UV resistant, outdoor enclosures • Powered from AC mains power and/or Solar • LFP (LiFePO4) Lithium Batterie

文件：293.29 Kbytes 页数：2 Pages

TYCONSYSTEMS

600W Outdoor UPS Systems

Features • 48V Charge Controller with 7 Port GigE PoE Switch. Ports can be configured for 802.3at or 24V Passive PoE. Remote Monitoring and Control. • Weatherproof, UV resistant, outdoor enclosures • Powered from AC mains power and/or Solar • Interior space for customer electronics • Wall or

文件：248.02 Kbytes 页数：2 Pages

TYCONSYSTEMS

丝印：50N6F7；Package：PowerFLAT；N-channel 60 V, 9 mΩ typ., 60 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trenc

文件：866.72 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件：129.58 Kbytes 页数：4 Pages

SIEMENS

西门子

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

文件：129.58 Kbytes 页数：4 Pages

SIEMENS

西门子