丝印：20NF20；Package：PowerFLAT；N-channel 200 V, 0.10 Ω, 15 A PowerFLAT™ (5x6) low gate charge STripFET™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Low gate charge ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate c

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丝印：L20NM20N；Package：PowerFLAT；N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET

General Features ■ WORLDWIDE LOWEST GATE CHARGE ■ TYPICAL RDS(on) = 0.088Ω ■ IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm MAX) ■ VERY LOW THERMAL RESISTANCE ■ LOW GATE RESISTANCE ■ LOW INPUT CAPACITANCE ■ HIGH dv/dt and AVALANCHE CAPABILITIES DESCRIPTION This 200V MO

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Automotive-grade N-channel 40 V, 1.3 m typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Description This N-channel Power MOSFET utilizes

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Automotive N-channel 40 V, 1.35 m typ., 120 A, STripFETTM F7 Power MOSFET in a PowerFLATTM 5x6 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced t

文件：583.82 Kbytes 页数：16 Pages

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STDRIVE102BH evaluation board for three-phase brushless motors

Features • Operating voltage from 6 V to 50 V • Output current up to 12 Arms: power stage based on STL220N6F7 60 V, 1.2 mΩ N-channel power MOSFETs • Three-shunt configuration • STDRIVE102BH triple half-bridge gate driver: – Programmable gate current (up to 1 A source / 2 A sink) – Charge pu

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丝印：220NS6F7；Package：PowerFLAT；N-channel 60 V, 1.4 mΩ typ., 250 A STripFET™ F7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6

Features  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Embedded Schottky diode  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technol

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Automotive-grade N-channel 60 V, 1.2 m typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced

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N-channel 600 V, 220 m typ., 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

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N-channel 600 V, 220 m typ., 10 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：792.21 Kbytes 页数：15 Pages

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Low gate input resistance

Description This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high po

文件：1.16183 Mbytes 页数：17 Pages

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