N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT??LOW GATE CHARGE STripFET??II MOSFET

DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique STripFET™ technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compro

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STMICROELECTRONICS

意法半导体

丝印：24N60M2；Package：PowerFLAT；N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co

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STMICROELECTRONICS

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N-channel 600 V, 0.175 typ., 15 A, MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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STMICROELECTRONICS

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N-channel 650 V, 0.205 typ., 14 A MDmesh M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features  Extremely low gate charge  Excellent output capacitance (Coss) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and improved vertical structure, the devices

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STMICROELECTRONICS

意法半导体

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：405.11 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：405.11 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：405.11 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：448.54 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：448.54 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Freewheeling circuit and protection circuit of low voltage  solar cell junction box as a bypass diode FEATURES Low power loss, high efficiency High Operating Junction Temperature High reliability RoHS product

文件：448.54 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司