6961

Extensionsbars,DIN3122and3123.1/46.3DIN3120/ISO1174

AN-6961

CriticalConductionModePFCController

AZ6961

10AMPSUBMINIATUREPOWERRELAY

AZ6961

10AMPSUBMINIATUREPOWERRELAY

FEATURES •Highsensitivity,120mWpickup •Dielectricstrength5000Vrms •Isolationspacinggreaterthan8mm •10Ampswitchingcapability •ClassBinsulationstandard,ClassFversionavailable •Epoxysealedversionforautomaticwavesolderingandcleaningavailable •

AZ6961

10AMPSUBMINIATURE

FEATURES •Highsensitivity,120mWpickup •Dielectricstrength5000Vrms •Isolationspacinggreaterthan8mm •10Ampswitchingcapability •Epoxysealedversionavailable •Reinforcedinsulation,EN60730-1(VDE0631,part1) •UL,CURfileE43203 •VDEfile131637

BD6961F

SiliconMonolithicIntegratedCircuit

BD6961F

StandardSingle-phaseFullwave

CEA6961

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-3.2A,RDS(ON)=120mW@VGS=-10V. RDS(ON)=150mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. RoHScompliant.

CED6961

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13.2A,RDS(ON)=110mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=150mW@VGS=-4.5V. RoHScompliant.

CEM6961

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-3.8A,RDS(ON)=110mW@VGS=-10V. RDS(ON)=150mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.